• Insertion power gain: 14.6 dB
• Insertion Loss in bypass mode: 4.1 dB
• Low noise figure: 0.80 dB
• Low current consumption: 4.7mA
• Operating frequencies: 1452 - 1610 MHz
• Multi-state control: OFF-, bypass- and high gain-Mode
• Supply voltage: 1.6 V to 3.1 V


The BGA8G1BN6 is a front-end low noise amplifier for LTE which covers a wide frequency range from 1452 MHz to 1610 MHz. The LNA provides 14.6 dB gain and 0.80 dB noise figure at a current consumption of 4.7mA . In bypass mode the LNA provides an insertion loss of 4.1 dB.
The BGA8G1BN6 is based upon Infineon Technologies‘ B7HF Silicon Germanium technology. It operates from 1.6 V to 3.1 V supply voltage. The device features a multi-state control (OFF-, bypass- and high gain-Mode).


• Ultra small TSNP-6-2 leadless package (footprint: 0.7 x 1.1 mm2)
• B7HF Silicon Germanium technology
• RF output internally matched to 50 Ohm
• Low external component count
• 1kV HBM ESD protection (including AI-pin)
• Pb-free (RoHS compliant) package