• Operating frequencies: 5150 - 5850 MHz
• Insertion power gain: 12.2 dB
• Insertion Loss in bypass mode: 7.2 dB
• Low noise figure: 2.2dB
• Low current consumption: 4.3mA
• Multi-state control: OFF-, bypass- and high gain-Mode
• Ultra small TSNP-6-2 leadless package
• Low external component count


The LTE data rate can be significantly improved by using the Low Noise Amplifier. The integrated bypass function increases the overall system dynamic range and leads to more flexibility in the RF front-end.
In high gain mode the LNA offers best Noise Figure to ensure high data rates even on the LTE cell edge. Closer to the basestation the bypass mode can be activated reducing current consumption.
The BGA8U1BN6 is designed for the inlicensed LTE spectrum (5-6GHz) part of the 3GPP Release 13.


The BGA8U1BN6 is a front-end low noise amplifier for LTE which covers a wide frequency range from 5150 MHz to 5850 MHz. The LNA provides 12.2 dB gain and 2.2 dB noise figure at a current consumption of 4.3mA in the application configuration described in Chapter 4. In bypass mode the LNA provides an insertion loss of 7.2 dB.
The BGA8U1BN6 is based upon Infineon Technologies‘ B7HF Silicon Germanium technology. It operates from 1.6 V to 3.1 V supply voltage. The device features a multi-state control (OFF-, bypass- and high gain-Mode).