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Vishay vPolyTan T59



• Ultra-low ESR
• 100 % surge current tested
• Molded case 7343 EIA size
• Terminations: wraparound
• 12 mm tape and 7" (178 mm) reel packaging
per EIA-481 standard


• Decoupling, smoothing, filtering
• Bulk energy storage in Solid State Drives (SSD)
• Infrastructure equipment
• Storage and networking
• Computer motherboards
• Smartphones and tablets


Vishay Intertechnology, Inc. introduced a new series of vPolyTan multi-anode polymer surface-mount chip capacitors that delivers increased volumetric efficiency for computing, telecom, and industrial applications. Combining polymer tantalum technology with Vishay’s patented multi-array packaging (MAP), the T59 series delivers the industry’s highest capacitance density, while maintaining best-in-class ESR.
Available in the molded EE (7343-43) case code, the capacitors released today offer up to 25 % better volumetric efficiency than similar devices, which allows for higher capacitance and voltage ratings. For example, their capacitance of 150 µF at 30 V is three times higher in capacitance than the closest competing device. In addition, the advanced packaging of the T59 series ensures ultra-low ESR from 25 mΩ to 150 mΩ at +25 °C and 100 kHz.
The devices offer capacitance from 15 µF to 470 µF, with capacitance tolerance of
 20 %, over voltage ratings up to 75 V. By replacing multiple lower-capacitance devices, T59 series capacitors reduce component counts to save PCB space and lower costs in solid-state drives, networking equipment, and motherboards. In these products, the capacitors are intended for decoupling, smoothing, filtering, and energy storage applications.
The T59 series features ripple current from 1.3 A to 3.1 A at 100 kHz, and an operating temperature range of -55 °C to +105 °C. RoHS-compliant, halogen-free, and Vishay Green, the devices offer both lead (Pb)-free and tin/lead (Sn/Pb) wraparound terminations, and are available in tape-and-reel packaging per the EIA-481 standard. The capacitors are 100 % surge current tested to ensure robust performance in high-inrush-current applications.