650V thinQ!™ SiC Diodes Generation 5
【产品特性】• Benchmark switching behavior
• No reverse recovery charge
• Smooth recovery curve
• Temperature independent switching behavior
• High operating temperature (Tj max = 175°C)
• PC Power
• Motor Drives
【文字介绍】• This product family has been optimized from all key aspects including junction structure, substrate, and die attach. It represents a well-balanced product family which offers state of the art performance and high surge current capability at competitive cost level.
• Generation 5 SiC Schottky diode offers the optimum efficiency and ruggedness balance. Lower VF means lower conduction loss and lower Qc means lower switching loss. Qc x VF is the Figure of Merit for efficiency and comparison indicates that Generation 5 matches the best competitors on the market. In addition, SiC Generation 5 offers a surge current robustness far better than that offered by the most efficient products. Thus under abnormal conditions this surge current capability offers excellent device robustness. All over, SiC Generation 5 offers excellent efficiency and surge current capability at the same time. No other SiC diode product on the market offers such good balance between efficiency and surge current capability. Some vendors offer better efficiency but weak surge current; while others offer better surge current but are less attractive in efficiency.