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600-V 12-A Single Channel GaN Power Stage LMG3410

 2016-09-21

【产品特性】

•25-ns Typical Propagation Delay
•Externally-Adjustable Drive Strength for Switching Performance and EMI Control:Supports 25 to 100 V/ns
•Internal Buck-Boost Converter Generates Negative Drive Voltage
•Fault Output Ensures Safety: UVLO Protection, Over-current Protection, Over-temperature Protection
•Revolutionize high-performance power conversion with TI’s 600-V GaN FET power stage

【产品应用】

•Server/telecom AC rectifier to 12V/48V
•High-voltage DC distribution in server
•Industrial AC/DC
•Photo-voltaic inverters

【文字介绍】

The LMG3410 Single-Channel Gallium-Nitride (GaN) Power Stage contains a 70-mΩ, 600-V GaN power transistor and specialized driver in an 8-mm by 8-mm QFN package. Our Direct Drive architecture is used to create a normally-off device while providing the native switching performance of the GaN power transistor. When the LMG3410 is unpowered, an integrated low-voltage silicon MOSFET turns the GaN device off via its source. In normal operation, the lowvoltage silicon MOSFET is held on continuously while the GaN device is gated directly from an internallygenerated negative voltage supply.