Shenzhen BASiC Semiconductor LTD., the leading enterprise of Wide -band Gap semiconductor industry in China, is committed to the R&D and industrialization of SiC power devices, and set up R&D centers in Nanshan Shenzhen, Pingshan Shenzhen, Yizhuang Beijing, Pukou Nanjing, Xinwu Wuxi and Nagoya Japan. BASiC has established a world-class R&D team, the core members include more than 10 PhDs from University of Cambridge, Tsinghua University, KTH Royal Institute of Technology, Chinese Academy of Sciences and other well-known universities and research institutions at home and abroad.

BASiC master the global advanced core technology of SiC. The R&D fields cover the whole industrial chain of SiC power devices, such as epitaxial preparation, chip design, wafer manufacturing, packaging test and driver circuit application etc. Successively launched series of products such as full-current and full voltage range SiC schottky diode, 1200V SiC MOSFET which has passed the reliability test of industrial level and automotive Full-SiC power modules etc. The products have reached the international advanced level, which are widely used in new energy generation, EV, railway traction, smart grids, defense industry and other fields.

BASiC, one of the initiators of National Innovation Center for Advanced Radio Frequency Devices, has been approved as CAST cross-sector partnership between industry and academia integrated technology innovation service system of Wide-band Gap semiconductor synergetic innovation center, and jointly established the material and devices R&D center of Wide-band Gap Semiconductors with Research Institute of Tsinghua University in Shenzhen. BASiC was also awarded with the honor of China IC outstanding technology innovation product, and won the first prize in China innovation and entrepreneurship competition.