• Insertion power gain: 12.2 dB
• Insertion Loss in bypass mode: 7.2 dB
• Low noise figure: 2.2dB
• Low current consumption: 4.3mA
• Operating frequencies: 5150 - 5850 MHz
• Multi-state control: OFF-, bypass- and high gain-Mode
• Supply voltage: 1.6 V to 3.1 V


The BGA8U1BN6 is a front-end low noise amplifier for LTE which covers a wide frequency range from 5150 MHz to 5850 MHz. The LNA provides 12.2 dB gain and 2.2 dB noise figure at a current consumption of 4.3mA. In bypass mode the LNA provides an insertion loss of 7.2 dB.
The BGA8U1BN6 is based upon Infineon Technologies‘ B7HF Silicon Germanium technology. It operates from 1.6 V to 3.1 V supply voltage. The device features a multi-state control (OFF-, bypass- and high gain-Mode).


• Ultra small TSNP-6-2 leadless package (footprint: 0.7 x 1.1 mm2)
• B7HF Silicon Germanium technology
• RF output internally matched to 50 Ohm
• Low external component count
• 1kV HBM ESD protection (including AI-pin)
• Pb-free (RoHS compliant) package