• Vdc: 600V~1200V
• Package outline: TO-220/ TO252/ TO-247/ TO-263/ThinPAK..
• Pb-free plating; RoHS complaint; HF
• Benchmark switching behavior
• No reverse recovery charge
• Temperature independent switching behavior
• High operating temperature (T j max 175°C)


• PC power supplies
• Server power supplies
• Telecom power supplies
• Solar


The differences in material properties between SiC and silicon limit the fabrication of practical silicon unipolar diodes (Schottky diodes) to a range up to 100V – 150V, with relatively high on-state resistance and leakage current. On the other hand, SiC Schottky barrier diodes (SBD) can reach a much higher breakdown voltage