代理產線

FOD8332

 2014-08-20

【基本資料】

【產品特性】

• Abs Max Peak output current(A)=3A
• Comparative Tracking Index (CTI),min=175
• Max Working Insulation Voltage VIORM=1.414Vpeak
• Highest Allowable Over Voltage VIOTM=8000Vpeak
• External Creepage=8.0mm
• Insulation thickness=0.5mm
• Case Temperature=150℃

• Input LED Drive Facilitates Receiving Digitally Encoded Signals from PWM Output
• Optically Isolated Fault-Sensing Feedback
• Active Miller Clamp to Shut Off IGBT During High dv/dt without Negative Supply Voltage
• High Noise Immunity Characterized by Common Mode Rejection – 35 kV/μs Minimum, VCM = 1500 VPEAK
• 2.5 A Peak Output Current Driving Capability for Medium Power IGBT
• P-Channel MOSFETs at Output Stage Enable Output Voltage Swing Close to Supply Rail (Rail-to-Rail Output)
• Wide Supply Voltage Range: 15 V to 30 V
• Integrated IGBT Protection
• Desaturation Detection
•“Soft” IGBT Turn-Off
• Under-Voltage Lockout (UVLO) with Hysteresis
• Fast Switching Speed Over Full Operating Temperature Range
• 250 ns Maximum Propagation Delay
• 100 ns Maximum Pulse Width Distortion
• Extended Industrial Temperate Range: –40°C to 100°C
• Safety and Regulatory Approvals
• UL1577, 4,243 V RMS for 1 Minute
• DIN-EN/IEC60747-5-5 (Pending):
1,414 VPEAK Working Insulation Voltage
8,000 VPEAK Transient Isolation Voltage Rating•8 mm Creepage and Clearance Distances

【產品應用】

• Automation
• Consumer Appliances
• Energy Generation & Distribution
• Industrial Motor
• Motion Control - Industrial Motor
• Uninterruptible Power Supply

【文字介紹】

The FOD8332 is an advanced 2.5 A output current IGBT drive optocoupler capable of driving medium power IGBTs with ratings up to 1,200 V and 150 A. It is suited for fast-switching driving of power IGBTs and MOSFETs used in motor control inverter applications and high-performance power systems. The FOD8332 offers critical protection features necessary for preventing fault conditions that lead to destructive thermal runaway of IGBTs.

The device utilizes Fairchild’s proprietary Optoplanar® coplanar packaging technology and optimized IC design to achieve reliable high isolation voltage and high noise immunity, characterized by high common-mode rejection and power supply rejection specifications. The device is housed in a wide-body 16-pin small-outline plastic package.

The gate-driver channel consists of an aluminum gallium arsenide (AlGaAs) light-emitting diode (LED) optically coupled to an integrated high-speed driver circuit with a low-RDS(ON) MOSFET output stage. The fault-sense channel consists of an aluminium gallium arsenide (AlGaAs) LED optically coupled to an integrated high-speed feedback circuit for fault sensing.
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