代理產線

PBSS4330PA

 2014-07-23

【基本資料】

【產品特性】

NPN low VCEsat Breakthrough In Small Signal (BISS) transistor, encapsulated in an ultra thin SOT1061 leadless small Surface-Mounted Device (SMD) plastic package with medium power capability.


30 V, 3 A NPN low VCEsat (BISS) transistor


【產品應用】

• Loadswitch
• Battery-driven devices
• Power management
• Charging circuits
• Power switches (e.g. motors, fans)

【文字介紹】

• Low collector-emitter saturation voltage VCEsat
• High collector current capability IC and ICM
• Smaller required Printed-Circuit Board (PCB) area than for conventional transistors
• Exposed heat sink for excellent thermal and electrical conductivity
• Leadless small SMD plastic package with medium power capability