News Center

Fairchild Semiconductor’s 100V MOSFET Provides 50 Percent Lower RDS(ON) for Power Supply Designs

 2009-05-15

100V MOSFET Offers Excellent Figure of Merit (FOM) for Switching Applications

Excellent Figure of Merit (FOM) for Switching Applications - Fairchild Semiconductor provides designers of isolated DC-DC applications a 100V MOSFET with 50 percent lower RDS(ON) and excellent FOM for higher efficiency in power supply designs. The FDMS86101, a 100V MOSFET packaged in 5mm x 6mm MLP Power56 packaging, is designed using Fairchild’s advanced PowerTrench® process that minimizes on-state resistance, while maintaining superior switching performance and ruggedness. This proprietary process technology provides the industry’s lowest RDS(ON) (8 milliOhms) compared to current solutions with the same gate charge and allows the FDMS86101 to improve conduction losses without suffering the penalty of a higher gate charge. Ethernet, blade servers and telecom applications are transitioning from a 12V to a 48V power supply and the need for switches that optimize efficiency is increasingly important.

This PowerTrench MOSFET offers a built-in enhanced soft-body diode that lowers switching noise and decreases the applications’ susceptibility to EMI. This feature saves board space and reduces components because many alternate solutions need to include a snubber network to reduce switching noise spikes.

FDMS86101 is part of a comprehensive portfolio of PowerTrench MOSFETs that are instrumental in achieving higher energy efficiency by meeting the electrical and thermal performance requirements for today’s electronics. Fairchild's advanced-performance PowerTrench MOSFET process technology yields exceptionally low values for Miller Charge (QGD), RDS(on) and total gate charge (QG) - enhancements that result in superior switching performance and thermal efficiencies.