BASiC Semiconductor Co., Ltd., the innovative enterprise of Wide-Band-Gap (WBG) semiconductor industry in China, is committed to the R&D and industrialization of SiC power devices. The R&D centers are located in Shenzhen, Beijing, Wuxi，Hongkong and Nagoya (Japan). BASiC has established a competitive R&D team, from which over 20 core members hold doctorates from renowned universities and research institutions such as University of Cambridge, Tsinghua University, Chinese Academy of Sciences, RWTH Aachen University and Swiss Federal Institute of Technology.

BASiC masters the state-of-the-art SiC semiconductor technologies. The R&D fields cover the whole industrial chain of SiC power devices, such as chip design, wafer fabrication, packaging and driver circuits. BASiC holds over 200 intellectual property rights and successively launched series of product such as discrete SiC Schottky Diodes ＆ MOSFETs, Automotive & Industrial Full-SiC Power Modules and Power Device Driver ICs. The products are widely used in renewable power generation, electric vehicles, locomotive traction, industrial drives, smart grids.

The company has established an R&D center for the WBG semiconductor materials and devices together with the research institute from Tsinghua University. It is one of the shareholders of the National Innovation Center for Advanced Radio Frequency Devices (NARFD). It was also approved as the Collaborative Innovation Center under China Association of Science and Technology (CAST), and Guangdong Province Research Center for SiC Power Device Engineering Technology. BASiC has been awarded numerous national accolades for its technological innovations in the development of new products, and has won several competition prizes during its development phase.