PN Junction Semiconductor possesses extensive technical expertise and a comprehensive industrial advantage. Its founder, Dr. Huang Xing, has been dedicated to the design and development of SiC and GaN power devices since 2009, under the guidance of Professor Jayant Baliga, the inventor of IGBT, and Professor Alex Huang, the inventor of ETO. Currently, PN Junction Semiconductor has released over 100 different products of SiC diodes, SiC MOSFETs, SiC power modules, and GaN HEMTs on the 650V, 1200V, and 1700V voltage platforms. These mass-produced products are widely used in electric vehicles, IT equipment power supplies, photovoltaic inverters, energy storage systems, industrial applications, etc.PN Junction Semiconductor ensures a continuous and stable supply to Tier 1 manufacturers, and its product quality and supply capacity have gained widespread recognition from customers.