代理產線

【K9F1G08U0D】

 2011-04-22

【基本資料】

【產品特性】

• Voltage Supply - 3.3V Device(K9F1G08U0D) : 2.7V ~ 3.6V
• Organization
- Memory Cell Array : (128M + 4M) x 8bit
- Data Register : (2K + 64) x 8bit
• Automatic Program and Erase
- Page Program : (2K + 64)Byte
- Block Erase : (128K + 4K)Byte
• Page Read Operation
- Page Size: (2K + 64) Byte - Random Read: 40μs (Max.) - Serial Access : 25ns(Min.)
• Fast Write Cycle Time
- Page Program time : 250μs(Typ.)
- Block Erase Time : 2ms(Typ.)
• Command/Address/Data Multiplexed I/O Port
• Hardware Data Protection
- Program/Erase Lockout During Power Transitions
• Reliable CMOS Floating-Gate Technology
-ECC requirement : 1 bit / 528bytes
• Command Driven Operation
• Unique ID for Copyright Protection
• Package : - K9F1G08U0D-SCB0/SIB0 : Pb-FREE PACKAGE 48 - Pin TSOP I (12 x 20 / 0.5 mm pitch)
- K9F1G08U0D-BCB0/BIB0 : Pb-FREE PACKAGE 63 FBGA (9 x 11 / 0.8 mm pitch)

1Gb NAND Flash
Single-Level-Cell (1bit/cell)

【產品應用】

.Network application
.STB
.Mobile TV
.Portable device

【文字介紹】

1. Offered in 128Mx8bit, the K9F1G08U0D is a 1G-bit NAND Flash Memory with spare 32M-bit. Its NAND cell provides the most cost-effective solution for the solid state application market.
2. The K9F1G08U0D is an optimum solution for large nonvolatile storage applications such as solid state file storage and other portable applications requiring non-volatility.
3. The device is offered in 3.3V Vcc.