代理產線

Samsung LP DDR4

 2015-03-11

【基本資料】

【產品特性】

VDD1/VDD2/VDDQ:1.8V/1.1V/1.1V
Double Data Rate architecture:2 data transfers per clock cycle
Burst Length:16,32 (OTF)
Burst type:Sequential
No DLL: CK to DQS is not synchronized

【文字介紹】

The next-generation LPDDR4 DRAM will contribute significantly to faster growth of the global mobile DRAM market, which will soon comprise the largest share of the entire DRAM market.

It enabling end users to have faster, more responsive applications, more advanced features, and higher resolution displays while maximizing battery life