1. 2.4 kV ESD protected
2. Small and leadless ultra thin SMD plastic package: 2 x 2 x 0.65 mm
3. Exposed drain pad for excellent thermal conduction
4. Tin-plated 100 % solderable side pads for optical solder inspection
5. Very low Rdson : 24mΩ(max @ VGS=4.5V)

VDS -20 V, single P-channel Trench MOSFET


Charging switch for portable devices
DC-to-DC converters
Power management in battery-driven portable devices
Hard disk and computing power management


P-channel enhancement mode Field-Effect Transistor (FET) in a leadless medium power DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.