• Operating frequencies: 3.4 - 3.8 GHz
• Insertion power gain: 13.2 dB
• Insertion Loss in bypass mode: 5.8 dB
• Low noise figure: 1.25 dB
• Low current consumption: 4.0mA
• Multi-state control: OFF-, bypass- and high gain-Mode
• Ultra small TSNP-6-2 leadless package
• RF input and RF output internally matched to 50 Ohm
• No external components necessary


The LTE data rate can be significantly improved by using the Low Noise Amplifier. The integrated bypass function increases the overall system dynamic range and leads to more flexibility in the RF front-end.
In high gain mode the LNA offers best Noise Figure to ensure high data rates even on the LTE cell edge. Closer to the basestation the bypass mode can be activated reducing current consumption.


The BGA8V1BN6 is a front-end low noise amplifier for LTE which covers a wide frequency range from 3.4 GHz to 3.8 GHz. The LNA provides 13.2 dB gain and 1.25 dB noise figure at a current consumption of 4.0mA in the application configuration described in Chapter 4. In bypass mode the LNA provides an insertion loss of 5.8 dB.
The BGA8V1BN6 is based upon Infineon Technologies‘ B9HF Silicon Germanium technology. It operates from 1.6 V to 3.1 V supply voltage. The device features a multi-state control (OFF-, bypass- and high gain-Mode).