K9F2G08U0C
2011-05-06
| 基本資料 |
【基本資料】 
|
|---|---|
| 產品特性 |
【產品特性】 Voltage Supply - 3.3V Device(K9F2G08U0C) : 2.7V ~ 3.6V• Organization - Memory Cell Array : (256M + 8M) x 8bit - Data Register : (2K + 64) x 8bit • Automatic Program and Erase - Page Program : (2K + 64)Byte - Block Erase : (128K + 4K)Byte • Page Read Operation - Page Size : (2K + 64)Byte - Random Read: 40μs (Max.) - Serial Access : 25ns(Min.) • Fast Write Cycle Time - Page Program time : 250μs(Typ.) - Block Erase Time : 2ms(Typ.) • Command/Address/Data Multiplexed I/O Port • Hardware Data Protection - Program/Erase Lockout During Power Transitions • Reliable CMOS Floating-Gate Technology -ECC requirement : 1 bit / 528bytes • Command Driven Operation • Unique ID for Copyright Protection • Package : - K9F2G08U0C-SCB0/SIB0 : Pb-FREE PACKAGE 48 - Pin TSOP I (12 x 20 / 0.5 mm pitch) - K9F2G08U0C-BCB0/BIB0 : Pb-FREE PACKAGE 63 - ball FBGA (9 x 11 / 0.8 mm pitch) 2Gb C-die NAND Flash Single-Level-Cell (1bit/cell) |
| 產品應用 |
【產品應用】 Network application• IP TV • STB • Portable device |
| 文字介紹 |
【文字介紹】 Offered in 256Mx8bit, the K9F2G08U0C is a 2G-bit NAND Flash Memory with spare 64M-bit. Its NAND cell provides the most cost-effective solution for the solid state application market.The K9F2G08U0C is an optimum solution for large nonvolatile storage applications such as solid state file storage and other portable applications requiring non-volatility |