代理產線

【K9G8G08U0C】

 2011-04-22

【基本資料】

【產品特性】

• Voltage Supply - 3.3V Device(K9G8G08U0C) : 2.7V ~ 3.6V
• Organization
- Memory Cell Array : (1G+55.2M) x 8bit
- Data Register : (8K + 436) x 8bit
• Automatic Program and Erase
- Page Program : (8K + 436)Byte
- Block Erase : (1M + 54.5K)Byte
• Page Read Operation
- Page Size : (8K + 436)Byte
- Random Read: 300μs (Max.)
- Serial Access : 30ns(Min.)
• Memory Cell : 2bit / Memory Cell
• Fast Write Cycle Time - Program time : 1.3ms(Typ.)
- Block Erase Time : 1.5ms(Typ.)
• Command/Address/Data Multiplexed I/O Port
• Hardware Data Protection
- Program/Erase Lockout During Power Transitions
• Reliable CMOS Floating-Gate Technology
- ECC Requirement : 24bit/(1K +54.5)Byte
• Command Register Operation
• Unique ID for Copyright Protection
• Package :
- K9G8G08U0C-SCB0/SIB0 : Pb-FREE PACKAGE 48
- Pin TSOP1 (12 x 20 / 0.5 mm pitch)

8Gb C-die NAND Flash
Multi-Level-Cell (2bit/cell)

【產品應用】

.Network application
.MP3/MP4
.Mobile device
.Portable device
.Mass storage device

【文字介紹】

1. Its NAND cell provides the most cost-effective solution for the solid state mass storage market.
2. The K9G8G08U0C is an optimum solution for large nonvolatile storage applications such as solid state file storage and other portable applications requiring non-volatility
3. The device is offered in 3.3V Vcc.