代理产线

Samsung LP DDR4

 2015-03-11

【基本数据】

【产品特性】

*VDD1 / VDD2 / VDDQ:1.8V / 1.1V / 1.1V
*Double Data Rate architecture:2 data transfers per clock cycle
*Burst Length:16, 32 (OTF)
*Burst type:Sequential
*No DLL:CK to DQS is not synchronized

• Samsung LPDDR4 features:
• 2channel composition per die
• 8 internal banks for each channel
• Internal VREF and VREF training
• FIFO based write/read training
• LVSTL (Low Voltage Swing Terminated Logic) IO
VSSQ Termination

【产品应用】

Smart phone / Tablet pc

【文字介绍】

The next-generation LPDDR4 DRAM will contribute significantly to faster growth of the global mobile DRAM market, which will soon comprise the largest share of the entire DRAM market.

It enabling end users to have faster, more responsive applications, more advanced features, and higher resolution displays while maximizing battery life