代理產線

BFU730F

 2012-07-04

【基本資料】

【產品特性】

•Low noise high gain microwave transistor
•Noise figure (NF) = 0.8 dB at 5.8 GHz
•High maximum power gain 18.5 dB at 5.8 GHz
•110 GHz fT silicon germanium technology
•noise figure 1.30 dB
•collector-base capacitance 55 fF
•transition frequency 55 GHz
•maximum power gain 12.5 dB

【產品應用】

•2nd LNA stage and mixer stage in DBS LNB’s
•Low noise amplifiers for microwave communications systems
•Ka band oscillators DRO’s
•Low current battery equipped applications
•Microwave driver / buffer applications
•Wi-Fi / WLAN / WiMAX
•GPS
•RKE
•AMR
•ZigBee
•LTE, cellular, UMTS
•SDARS first stage LNA
•FM radio
•Mobile TV
•Bluetooth

【文字介紹】

NPN silicon germanium microwave transistor for high speed, low noise applications in a plastic, 4-pin dual-emitter SOT343F package.
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