BFU730F
2012-07-04
| 基本資料 |
【基本資料】 
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|---|---|
| 產品特性 |
【產品特性】 •Low noise high gain microwave transistor•Noise figure (NF) = 0.8 dB at 5.8 GHz •High maximum power gain 18.5 dB at 5.8 GHz •110 GHz fT silicon germanium technology •noise figure 1.30 dB •collector-base capacitance 55 fF •transition frequency 55 GHz •maximum power gain 12.5 dB |
| 產品應用 |
【產品應用】 •2nd LNA stage and mixer stage in DBS LNB’s•Low noise amplifiers for microwave communications systems •Ka band oscillators DRO’s •Low current battery equipped applications •Microwave driver / buffer applications •Wi-Fi / WLAN / WiMAX •GPS •RKE •AMR •ZigBee •LTE, cellular, UMTS •SDARS first stage LNA •FM radio •Mobile TV •Bluetooth |
| 文字介紹 |
【文字介紹】 NPN silicon germanium microwave transistor for high speed, low noise applications in a plastic, 4-pin dual-emitter SOT343F package. |