代理產線

SiC

 2016-09-21

【基本資料】

【產品特性】

• Vdc: 600V~1200V
• Package outline: TO-220/ TO252/ TO-247/ TO-263/ThinPAK..
• Pb-free plating; RoHS complaint; HF
• Benchmark switching behavior
• No reverse recovery charge
• Temperature independent switching behavior
• High operating temperature (T j max 175°C)


【產品應用】

• PC power supplies
• Server power supplies
• Telecom power supplies
• Solar
• UPS

【文字介紹】

The differences in material properties between SiC and silicon limit the fabrication of practical silicon unipolar diodes (Schottky diodes) to a range up to 100V – 150V, with relatively high on-state resistance and leakage current. On the other hand, SiC Schottky barrier diodes (SBD) can reach a much higher breakdown voltage.