代理產線

PMDPB56XN

 2015-03-25

【基本資料】

【產品特性】

‧Very fast switching
‧Trench MOSFET technology
‧Small and leadless ultra thin SMD plastic package: 2 x 2 x 0.65 mm
‧Exposed drain pad for excellent thermal conduction
‧Very low Rdson : 74mΩ(max @ VGS=4.5V)

VDS 30 V, dual N-channel Trench MOSFET

【產品應用】

‧Charging switch for portable devices
‧DC-to-DC converters
‧Small brushless DC motor drive
‧Power management in battery-driven portables
‧Hard disc and computing power management
‧IP Cam/surveillance

【文字介紹】

Dual N-channel enhancement mode Field-Effect Transistor (FET) in a small and leadless ultra thin DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.