代理產線

PMDPB56XN

 2013-12-11

【基本資料】

【產品特性】

1. Very fast switching
2. Trench MOSFET technology
3. Small and leadless ultra thin SMD plastic package: 2 x 2 x 0.65 mm
4. Exposed drain pad for excellent thermal conduction
5. Very low Rdson : 74mΩ(max @ VGS=4.5V)


VDS 30 V, dual N-channel Trench MOSFET


【產品應用】

Charging switch for portable devices
DC-to-DC converters
Small brushless DC motor drive
Power management in battery-driven portables
Hard disc and computing power management

【文字介紹】

Dual N-channel enhancement mode Field-Effect Transistor (FET) in a small and leadless ultra thin DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.