650V thinQ!™ SiC Diodes Generation 5
| 基本数据 |
【基本数据】 
|
|---|---|
| 产品特性 |
【产品特性】 •V br at 650V 650V； D2PAK (TO-263)，D2PAK real 2pin，DPAK (TO-252)，ThinPAK，TO-220 real 2pin，TO-247 |
| 产品应用 |
【产品应用】 •Telecom/Server SMPS |
| 文字介绍 |
【文字介绍】 With thinQ!™ Generation 5 Infineon presents a new leading edge technology for SiC Schottky Barrier diodes, delivering market leading efficiency at attractive cost point. Infineon’s proprietary diffusion soldering process, already introduced with Generation 3, is now combined with a new, more compact design as well as latest advancements in thin wafer technology, bringing improved thermal characteristics and lower Figures of Merit (Q c x V f). The result is a series of products delivering improved efficiency in PFC and Boost stages over all load conditions with respect to all previous thinQ!™ generations. |