650V thinQ!™ SiC Diodes Generation 5
•V br at 650V
650V； D2PAK (TO-263)，D2PAK real 2pin，DPAK (TO-252)，ThinPAK，TO-220 real 2pin，TO-247
With thinQ!™ Generation 5 Infineon presents a new leading edge technology for SiC Schottky Barrier diodes, delivering market leading efficiency at attractive cost point. Infineon’s proprietary diffusion soldering process, already introduced with Generation 3, is now combined with a new, more compact design as well as latest advancements in thin wafer technology, bringing improved thermal characteristics and lower Figures of Merit (Q c x V f). The result is a series of products delivering improved efficiency in PFC and Boost stages over all load conditions with respect to all previous thinQ!™ generations.