代理产线

650V thinQ!™ SiC Diodes Generation 5

 2014-05-28

【基本数据】

【产品特性】

•V br at 650V
•Improved Figure of Merit (Q c x V f)
•No reverse recovery charge
•Soft switching reverse recovery waveform
•Temperature independent switching behavior
•High operating temperature (T j max 175°C)
•Improved surge capability


650V; D2PAK (TO-263),D2PAK real 2pin,DPAK (TO-252),ThinPAK,TO-220 real 2pin,TO-247


【产品应用】

•Telecom/Server SMPS
•PC Silverbox
•LED/LCD TV

【文字介绍】

With thinQ!™ Generation 5 Infineon presents a new leading edge technology for SiC Schottky Barrier diodes, delivering market leading efficiency at attractive cost point. Infineon’s proprietary diffusion soldering process, already introduced with Generation 3, is now combined with a new, more compact design as well as latest advancements in thin wafer technology, bringing improved thermal characteristics and lower Figures of Merit (Q c x V f). The result is a series of products delivering improved efficiency in PFC and Boost stages over all load conditions with respect to all previous thinQ!™ generations.