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Toshiba东芝发布第八代60V U-MOS TK11S10N1L 用于车用市场

Automotive N-ch power MOSFET, 100 V, 11 A product (RDS(ON) max=28 mΩ, DPAK+ package): TK11S10N1L

东芝已经推出了“TK11S10N1L”,这是一个60 V N沟道功率MOSFET用于汽车应用。

 

利用东芝MOSFET的U-MOSVIII-H系列中的低电阻DPAK+封装,该产品拥有业界领先的*1的低导通电阻特性。
 其低导通电阻特性可降低导通损耗,并与它的低开关噪声,EMI降低亦可预期。另外,作为100V的系统还支持逻辑电平的驱动器(4.5 V)时,该产品可用于各种应用,例如在发动机的ECU。
 TK11S10N1L将符合AEC-Q101汽车级资质要求符合*2

  • *1: Comparison with the product of the same maximum rating, according to a survey by Toshiba (as of July 2015).
  • *2: Please check the conformity schedule in each case.

 

 

Applications

Automotive equipment

  • Engine ECUs
  • LED headlights
  • DC-DC converters
  • Motor drives

 

Features/ Outline Drawing

Features

  • Industry leading*1 low On-resistance:
      RDS(ON)=28 mΩ (max) @VGS=10 V
  • High channel temperature rating: Tch=175 °C
  • Low switching noise
  • Supports logic level drive (4.5 V)

 

  • *1: Comparison with the product of the same maximum rating, according to a survey by Toshiba (as of July 2015).

 

Outline drawing

 

Main Specifications

Main specifications of TK11S10N1L   (@Ta=25 °C)

 

Polarity

Part number

Absolute maximum ratings

RDS(ON)  max
@VGS=10 V
(mΩ)

Rth(ch-c)  max
(°C/W)

Zener diode
between gate
and source

Series

Package

 

VDSS
(V)

ID
(A)

IDP
(A)

Tch
(°C)

 

N-ch

TK11S10N1L

100

11

33

175

28

2.3

Within

U-MOSVIII-H

DPAK+

 

 

Circuit Example

Direct injection engine ECUs

 

 

LED headlights

 

 

 

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