Vishay Launches Industry-First Power MOSFETs Specifying On-Resistance at 1.2-V Gate-to-Source Voltage
Vishay Intertechnology, Inc. today announced the industry's first power MOSFETs with on-resistance ratings at a 1.2-V gate-to-source voltage, a move that will help designers simplify power management circuitry while extending battery run times in portable electronic systems.
The new 1.2-V-rated Vishay Siliconix TrenchFET devices bring the MOSFET turn-on voltage into alignment with the 1.2-V to 1.3-V operating voltages of digital ICs used in mobile electronics, enabling safer and more reliable designs. As the first power MOSFETs that can be driven directly from 1.2-V buses, the new TrenchFETs provide the additional potential benefit of eliminating the need for an extra conversion stage in battery-operated systems with a core voltage lower than 1.8V.
In MOSFETs where 1.5V is the lowest rating, on-resistance tends to increase exponentially at lower, unspecified gate-to-source voltages such as 1.2V. By contrast, these new 1.2-V TrenchFETs offer guaranteed low n-channel on-resistance as low as 0.041 and p-channel on-resistance as low as 0.095? at a 1.2-V gate drive. On-resistance performance at a 1.5-V gate drive is better than in devices for which 1.5V is the lowest gate-to-source specification: as low as 0.022 (n-channel) and 0.058 (p-channel).
The devices released today (and their package types) are the n-channel SiA414DJ (PowerPAK SC-70), Si8424DB (MICRO FOOT), and SiB414DK (PowerPAK SC75), and the p-channel SiA417DJ (PowerPAK SC-70), Si8429DB (MICRO FOOT), and SiB417DK (PowerPAK SC-75). The previously released p-channel Si1499DH in the SC-70 package completes Vishay 1.2-V power MOSFET offerings.
Typical applications for the new devices include load, power amplifier, and battery charger switching in cell phones, PDAs, MP3 players, digital cameras, and other portable systems. In addition to saving on battery power with their low on-resistance, the new devices will save on space with package dimensions as small as