熱點頻道

BGA7M1N6

 2016-09-07

【產品特性】

• Insertion power gain: 13.0 dB
• Low noise figure: 0.60 dB
• Low current consumption: 4.4 mA
• Operating frequencies: 1805 - 2200 MHz
• Supply voltage: 1.5 V to 3.3 V

【產品應用】

The BGA7M1N6 is a front-end low noise amplifier for LTE which covers a wide frequency range from 1805 MHz to 2200 MHz. The LNA provides 13.0 dB gain and 0.60 dB noise figure at a current consumption of 4.4 mA in the application configuration described in Chapter 3. The BGA7M1N6 is based upon Infineon Technologies‘ B7HF Silicon Germanium technology. It operates from 1.5 V to 3.3 V supply voltage.

【文字介紹】

• Digital on/off switch (1V logic high level)
• Ultra small TSNP-6-2 leadless package (footprint: 0.7 x 1.1 mm 2 )
• B7HF Silicon Germanium technology
• RF output internally matched to 50 Ω
• Only 1 external SMD component necessary
• 2kV HBM ESD protection (including AI-pin)
• Pb-free (RoHS compliant) package