TS61001
2017-10-25
| 產品特性 |
【產品特性】 • Drives both low side and high side N-channel MOSFETS• 6Ω pull-up, 2Ω pull-down gate drivers • Independent TTL compatible inputs • Floating gate drive and bootstrap circuits for driving high side devices – up to 85V for the bootstrap supply voltage • 5 - 12V gate drive capability allows compatibility with a wide range of FETs • Fast propagation delays (<50nS typical) • Matched channel to channel delays (<25nS mismatch) • Fast rise and fall times • Optional break before make detection to set minimum dead time protection • Available comparator, amplifier and 3.3V linear regulator (10mA capability) for supporting circuitry • Under voltage lock out protection • Over temperature shut down (TSD) protection • Supports Qi®, PMA, A4WP and proprietary wireless power applications • Power outputs scalable based on FET size • Support for half and full-bridge power sections • Integrated comparator • Low external component count • Available in 28 pin 5x5 QFN |
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| 產品應用 |
【產品應用】 • Multi-standard compliant and non-compliant wirelesschargers for: Cell Phones and Smartphones GPS Devices Digital Cameras Tablets and eReaders Portable Lighting • Full and half-bridge power converters • Motor drive applications |
| 文字介紹 |
【文字介紹】 TS61001是可用於高電壓場效應晶體管驅動在全橋或半橋配置中驅動N溝道器件。該TS61001可以支持各種電源轉換器應用，多種標準和專有無線電力應用程序，以及馬達驅動器系統。 |