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AON6278

 2016-09-21

【产品特性】

VDS 80V
ID (at VGS=10V) 85A
RDS(ON) (at VGS=10V) < 3.3mΩ
RDS(ON) (at VGS=4.5V) < 4.6mΩ
The AON6278 uses trench MOSFET technology that is
uniquely optimized to provide the most efficient high
frequency switching performance. Both conduction and
switching power losses are minimized due to an
extremely low combination of R DS(ON) , Ciss and Coss.

【产品应用】

This device is ideal for boost converters and synchronous
rectifiers for consumer, telecom, industrial power supplies
and LED backlighting.

【文字介绍】

该AON6278采用沟槽MOSFET技术,是独特的优化,以提供最有效的高高频开关性能。两者的传导和开关功率损耗是由于减少到R DS(ON)。