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Toshiba東芝發佈第八代60V U-MOS TK11S10N1L 用於車用市場

 2015-11-04

Automotive N-ch power MOSFET, 100 V, 11 A product (RDS(ON) max=28 mΩ, DPAK+ package): TK11S10N1L

東芝已經推出了“TK11S10N1L”,這是一個60 V N溝道功率MOSFET用於汽車應用。


利用東芝MOSFET的U-MOSVIII-H系列中的低電阻DPAK+封裝,該產品擁有業界領先的*1的低導通電阻特性。
 其低導通電阻特性可降低導通損耗,並與它的低開關噪聲,EMI降低亦可預期。另外,作為100V的系統還支持邏輯電平的驅動器(4.5 V)時,該產品可用於各種應用,例如在發動機的ECU。
 TK11S10N1L將符合AEC-Q101汽車級資質要求符合*2

  • *1: Comparison with the product of the same maximum rating, according to a survey by Toshiba (as of July 2015).
  • *2: Please check the conformity schedule in each case.

 

 

Applications

Automotive equipment

  • Engine ECUs
  • LED headlights
  • DC-DC converters
  • Motor drives

 

Features/ Outline Drawing

Features

  • Industry leading*1 low On-resistance:
      RDS(ON)=28 mΩ (max) @VGS=10 V
  • High channel temperature rating: Tch=175 °C
  • Low switching noise
  • Supports logic level drive (4.5 V)

 

  • *1: Comparison with the product of the same maximum rating, according to a survey by Toshiba (as of July 2015).

 

Outline drawing

 

Main Specifications

Main specifications of TK11S10N1L   (@Ta=25 °C)

 

Polarity

Part number

Absolute maximum ratings

RDS(ON)  max
@VGS=10 V
(mΩ)

Rth(ch-c)  max
(°C/W)

Zener diode
between gate
and source

Series

Package

 

VDSS
(V)

ID
(A)

IDP
(A)

Tch
(°C)

 

N-ch

TK11S10N1L

100

11

33

175

28

2.3

Within

U-MOSVIII-H

DPAK+

 

 

Circuit Example

Direct injection engine ECUs

 

LED headlights

 

 

 

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